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| SI7415DN New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 0.110 @ VGS = -4.5 V -4.4 FEATURES ID (A) -5.7 rDS(on) (W) 0.065 @ VGS = -10 V D TrenchFETr Power MOSFET D New PowerPAKt Package - Low Thermal Resistance, RthJC - Low 1.07-mm Profile D Fast Switching APPLICATIONS D Load Switches D Half-Bridge Motor Drives D High voltage Non-Synchronous Buck Converters PowerPAKt 1212-8 S 3.30 mm S 1 2 3 S S 3.30 mm G 4 G D 8 7 6 5 D D D D P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -3.2 3.8 2.0 -55 to 150 -4.6 -20 -1.3 1.5 0.8 W _C -2.9 A Symbol VDS VGS 10 secs Steady State -60 "20 Unit V -5.7 -3.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71691 S-04881--Rev. A, 22-Oct-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7415DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -48 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -5.7 A VGS = -4.5 V, ID = -4.4 A VDS = -15 V, ID = -5.7 A IS = -3.2 A, VGS = 0 V -20 0.054 0.090 11 -0.8 -1.2 0.065 0.110 -1 "100 -1 -5 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -3.2 A, di/dt = 100 A/ms VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -30 V, VGS = -10 V, ID = -5.7 A 15 4 3.2 12 12 22 16 45 20 20 35 25 90 ns 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 4V 8 12 8 TC = 125_C 4 25_C 0 -55_C 4 3V 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71691 S-04881--Rev. A, 22-Oct-01 SI7415DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 1200 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) 1000 Ciss 800 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 600 400 Coss Crss 200 0.00 0 4 8 12 16 20 0 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 5.7 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.7 A r DS(on) - On-Resistance (W) (Normalized) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 4 8 12 16 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.20 20 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.16 I S - Source Current (A) 10 On-Resistance vs. Gate-to-Source Voltage ID = 5.7 A 0.12 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71691 S-04881--Rev. A, 22-Oct-01 www.vishay.com 3 SI7415DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 0.6 V GS(th) Variance (V) Power (W) 0.4 30 0.2 20 0.0 10 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 71691 S-04881--Rev. A, 22-Oct-01 |
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